Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures

Field emission from GaN and (Al,Ga)N/GaN nanorod heterostructures

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.

We demonstrate the selective area growth of GaN-(Al,Ga)N core-shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. Raman measurements relate this shift to compressive strain within the GaN core. On the nanoscale, cathodoluminescence spectroscopy and scann...

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the buil...

Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells

The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...

Formation of a quasi-two-dimensional electron gas in GaN/Al x Ga 1x N heterostructures with diffuse interfaces

Calculations of the electronic energy levels and the distribution of the quasi-two-dimensional electron gas ͑Q2DEG͒ at the GaN/Al x Ga 1Ϫx N interface that take into account the graded nature of the interface are presented in this article. Mapping of the interface using scanning transmission electron microscopy annular dark-field imaging, the changes in the N K-edge and the integrated intensity o...